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| Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN44N100Q3 VDSS ID25 RDS(on) trr = = 1000V 38A 220m 300ns miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 1000 1000 30 40 38 110 44 4 50 960 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in. g Features International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 22A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 V V Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls G = Gate S = Source D S S G D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. 200 nA 50 A 3 mA 220 m (c) 2011 IXYS CORPORATION, All Rights Reserved DS100306(03/11) IXFN44N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 22A Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 22A RG = 0.5 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 22A, Note 1 Characteristic Values Min. Typ. Max. 26 43 13.6 1046 86 0.12 48 30 66 28 264 76 110 S nF pF pF ns ns ns ns nC nC nC 0.13 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 22A, -di/dt = 100A/s VR = 100V, VGS = 0V 2.1 16.2 Characteristic Values Min. Typ. Max. 44 176 1.4 A A V 300 ns C A Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N100Q3 Fig. 1. Output Characteristics @ T J = 25C 45 40 35 30 8V VGS = 10V 90 80 70 60 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ T J = 25C ID - Amperes 25 20 15 10 7V 5 0 0 1 2 3 4 5 6 7 8 6V 9 10 ID - Amperes 50 40 8V 30 20 10 0 0 5 10 15 20 25 30 7V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C 45 40 35 VGS = 10V 8V 3.2 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature VGS = 10V 2.8 R DS(on) - Normalized 2.4 I D = 44A 2.0 I D = 22A 30 ID - Amperes 25 20 15 10 5 0 0 5 10 15 7V 1.6 1.2 6V 5V 20 25 0.8 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current 2.8 2.6 2.4 VGS = 10V TJ = 125C 45 40 35 30 Fig. 6. Maximum Drain Current vs. Case Temperature R DS(on) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 90 TJ = 25C ID - Amperes 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2011 IXYS CORPORATION, All Rights Reserved IXFN44N100Q3 Fig. 7. Input Admittance 70 80 70 60 25C TJ = - 40C Fig. 8. Transconductance 60 50 g f s - Siemens ID - Amperes 50 40 30 20 10 0 40 TJ = 125C 30 25C - 40C 125C 20 10 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 10 20 30 40 50 60 70 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 10 9 120 8 100 7 VDS = 500V I D = 22A I G = 10mA Fig. 10. Gate Charge IS - Amperes VGS - Volts TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 80 6 5 4 3 2 1 60 40 20 0 0 0 40 80 120 160 200 240 280 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 1000 Fig. 12. Forward-Bias Safe Operating Area f = 1 MHz Ciss RDS(on) Limit 100 1ms 250s Capacitance - PicoFarads 10,000 Coss 1,000 ID - Amperes 10 100 Crss 1 TJ = 150C TC = 25C Single Pulse 10 0 5 10 15 20 25 30 35 40 0.1 10 100 1,000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN44N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 0.1 Z(th)JC - C / W 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N100Q3(Q9)03-04-11 |
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